2SK2328 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2328

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2328

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

650

Gate to source breakdown

voltage

V(BR)GSS

±30

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

4.0

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body-drain diode forward

VDF

—

voltage

Body-drain diode reverse

t rr

—

recovery time

Note 1. Pulse Test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

3.0 V

1.0

1.4

Ω

6.5

—

S

1180 —

pF

265 —

pF

50

—

pF

15

—

ns

50

—

ns

105 —

ns

45

—

ns

0.95 —

V

420 —

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 550 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4A

VGS = 10 V*1

ID = 4 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 4 A

VGS = 10 V

RL = 7.5 Ω

IF = 7 A, VGS = 0

IF = 7 A, VGS = 0,

diF / dt = 100 A / µs

See characteristic curves of 2SK1403A

3

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