2SK2329 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2329 Datasheet PDF : 10 Pages
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2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
• Suitable for Switching regulator, DC-DC converter
Outline
DPAK-2
4
4
1
23
D
12 3
1. Gate
G
2. Drain
3. Source
4. Drain
S
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