2SK2329 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2329

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2329(L), 2SK2329(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

30

Gate to source breakdown

voltage

V(BR)GSS

±10

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

0.4

Static drain to source on state RDS(on)

—

resistance

—

Forward transfer admittance |yfs|

10

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

100 µA

—

1.4 V

0.03 0.04 Ω

0.04 0.06 Ω

18

—

S

1250 —

pF

540 —

pF

120 —

pF

20

—

ns

145 —

ns

225 —

ns

125 —

ns

0.9

—

V

100 —

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±200 µA, VDS = 0

VGS = ±6.5 V, VDS = 0

VDS = 25 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 5 A

VGS = 4 V*1

ID = 5 A

VGS = 2.5 V*1

ID = 5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 5 A

VGS = 4 V

RL = 2 Ω

IF = 10 A, VGS = 0

IF = 10 A, VGS = 0,

diF / dt = 20 A / µs

3

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