2SK2329 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2329 Datasheet PDF : 10 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
I D = 10 A
0.2
5A
2A
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
2SK2329(L), 2SK2329(S)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = 2.5 V
4V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I D = 2 A, 5 A, 10 A
0.06
2.5 V
0.04
2 A, 5 A, 10 A
0.02
V GS = 4 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
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