2SK2329 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2329 Datasheet PDF : 10 Pages
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2SK2329(L), 2SK2329(S)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di/dt = 20 A/µs
VGS = 0, Ta = 25°C
10
0.2 0.5 1 2
5 10 20
Reverse Drain Current I DR (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
200
100
Crss
50
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
80
16
V DD = 10 V
25 V
60
12
VGS
40
VDS
I D = 10 A 8
20
4
V DD = 25 V
10 V
0
0
20
40 60 80 100
Gate Charge Qg (nc)
1000
Switching Characteristics
VGS = 4 V, V DD = 10 V
500 PW = 3 µs, duty < 1 %
t d(off)
200
tf
100
tr
50
t d(on)
20
10
0.2
0.5 1 2
5 10 20
Drain Current I D (A)
6
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