2SK2328 데이터 시트보기 (PDF) - Renesas Electronics

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2SK2328

Silicon N Channel MOS FET

Renesas Electronics 

2SK2328

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 650

Gate to source breakdown voltage V(BR)GSS ±30

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

2.0

Static drain to source on state

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

4.0

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery

trr

—

time

Note: 3. Pulse test

Typ

—

—

—

—

—

1.0

6.5

1180

265

50

15

50

105

45

0.95

420

Ratings

650

±30

7

28

7

75

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Max

—

—

±10

250

3.0

1.4

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

(Ta = 25°C)

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 550 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4A, VGS = 10 V*3

S

ID = 4 A, VDS = 10 V*3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

pF

ns ID = 4 A, VGS = 10 V,

ns RL = 7.5 Ω

ns

ns

V IF = 7 A, VGS = 0

ns IF = 7 A, VGS = 0,

diF / dt = 100 A / µs

Rev.2.00 Sep 07, 2005 page 2 of 6

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