2SK2328 데이터 시트보기 (PDF) - Renesas Electronics
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2SK2328 Datasheet PDF : 7 Pages
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2SK2328
Static Drain to Source on State
Resistance vs. Temperature
5
VGS = 10 V
Pulse Test
4
3
ID = 10 A
5A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 100 A/µs, VGS = 0
Ta = 25°C
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current IDR (A)
1,000
Dynamic Input Characteristics
20
800
VDD = 100 V
250 V
16
400 V
600
12
VGS
400
VDS
200
0
20
8
ID = 8 A
VDD = 400 V
250 V
4
100 V
0
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
10
TC = 75°C
25°C
–25°C
5
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
5,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
100
10
Crss
5
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
VGS
duty
=
<
110%V, ,VPDWD =.=. 320µVs
td (off)
100
50
tf
20
tr
td (on)
10
5
0.2 0.5 1 2
5 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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