2SK2329 데이터 시트보기 (PDF) - Renesas Electronics
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2SK2329 Datasheet PDF : 8 Pages
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2SK2329(L), 2SK2329(S)
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
0.08
0.06
ID = 2 A, 5 A, 10 A
2.5 V
0.04
0.02
VGS = 4 V
2 A, 5 A, 10 A
0
-40
0
40 80 120 160
Case Temperature TC (°C)
1000
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
0.2
di/dt = 20 A/µs
VGS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
80
16
VDD = 10 V
25 V
60
12
VGS
40
VDS
ID = 10 A 8
20
4
VDD = 25 V
10 V
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = -25°C
10
25°C
5
75°C
2
1
VDS = 10 V
0.5
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
200
100
Crss
50
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 4 V, VDD = 10 V
500 PW = 3 µs, duty < 1 %
td(off)
200
tf
100
tr
50
td(on)
20
10
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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