2SK241 데이터 시트보기 (PDF) - Toshiba

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2SK241

Silicon N Channel MOS Type Field Effect Transistor

Toshiba 

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK241

2SK241

FM Tuner, VHF and RF Amplifier Applications

Unit: mm

· Low reverse transfer capacitance: Crss = 0.035 pF (typ.)

· Low noise figure: NF = 1.7dB (typ.)

· High power gain: GPS = 28dB (typ.)

· Recommend operation voltage: 5~15 V

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Symbol

VDS

VGS

ID

PD

Tch

Tstg

Rating

Unit

20

V

±5

V

30

mA

200

mW

125

°C

-55~125

°C

Electrical Characteristics (Ta = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

2-4E1D

Weight: 0.13 g (typ.)

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Gate leakage current

Drain-source voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

IGSS

VDS = 0, VGS = ±5 V

¾

¾

±50

nA

VDSX

VGS = -4 V, ID = 100 mA

20

¾

¾

V

IDSS

VDS = 10 V, VGS = 0

(Note) 1.5

¾

14

mA

VGS (OFF) VDS = 10 V, ID = 100 mA

¾

¾ -2.5

V

ïYfsï

VDS = 10 V, VGS = 0, f = 1 kHz

¾

10

¾

mS

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

Crss

¾

3.0

¾

pF

¾ 0.035 0.050 pF

Gps

VDS = 10 V, VGS = 0,

NF

f = 100 MHz (Figure 1)

¾

28

¾

dB

¾

1.7 3.0

dB

Note: IDSS classification O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0

1

2003-03-27

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