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2SK2730 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2730
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2730 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
I
D
= 25 A
20 A
4
10 A
2
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
2SK2730
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
V
GS
= 10 V
0.2
15 V
0.1
1
2 5 10 20 50 100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
20 A
0.6
I
D
= 25 A
0.4
V
GS
= 10 V
0.2
10 A
5A
0
–40 0
40 80 120 160
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25
°
C
20
10
25
°
C
5
75
°
C
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1 2
Drain Current
V
DS
= 10 V
Pulse Test
5 10 20 50
I
D
(A)
5
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