2SK2735S 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2735S

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2735(L), 2SK2735(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 20 mΩ typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

DPAK–2

4

4

D

G

S

12 3

12 3

1. Gate

2. Drain

3. Source

4. Drain

ADE-208-543

1st. Edition

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