2SK2926 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2926

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2926(L), 2SK2926(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

3. Value at Ta = 25°C, Rg ≥ 50 Ω

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

I AP * 3

EAR* 3

Pch*2

Tch

Tstg

Ratings

Unit

60

V

±20

V

15

A

60

A

15

A

15

A

19

mJ

25

W

150

°C

–55 to +150

°C

2

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