PTB20157 데이터 시트보기 (PDF) - Ericsson

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PTB20157

20 Watts, 1.35–1.85 GHz RF Power Transistor

Ericsson  

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PTB 20157

20 Watts, 1.35–1.85 GHz

RF Power Transistor

Description

The 20157 is an NPN common base RF power transistor intended

for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

Typical Output Power vs. Input Power

30

25

20

15

10

5

0

0

VCC = 22 V

f = 1.85 GHz

1

2

3

4

5

6

7

Input Power (Watts)

• 20 Watts, 1.35–1.85 GHz

• Class C Characteristics

• 40% Min Collector Efficiency at 20 Watts

• Gold Metallization

• Silicon Nitride Passivated

20157 LOT CODE

Package 20209

Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at Tflange = 25°C

Above 25°C derate by

Storage Temperature Range

Thermal Resistance (Tflange = 70°C)

Symbol

VCER

VCBO

VEBO

IC

PD

TSTG

RθJC

Value

50

50

4

6

75

0.43

–40 to +150

2.33

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C/W

1

9/28/98

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