2SK3019EB 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SK3019EB

2.5V Drive Nch MOSFET

ROHM Semiconductor 

2SK3019EB

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

Gate-source leakage

IGSS

Drain-source breakdown voltage V(BR)DSS

Zero gate voltage drain current IDSS

Gate threshold voltage

VGS (th)

Static drain-source on-state

resistance

RDS (on*)

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

l Yfs l *

Ciss

Coss

Crss

td(on)*

tr *

td(off)*

tf *

*Pulsed

Min.

-

30

-

0.8

-

-

20

-

-

-

-

-

-

-

　

Typ.

-

-

-

-

5

7

-

13

9

4

15

35

80

80

Max.

1

-

1

1.5

8

13

-

-

-

-

-

-

-

-

Unit

Conditions

A VGS=20V, VDS=0V

V ID=10A, VGS=0V

A VDS=30V, VGS=0V

V VDS=3V, ID=100A

 ID=10mA, VGS=4V

ID=1mA, VGS=2.5V

mS VDS=3V, ID=10mA

pF VDS=5V

pF VGS=0V

pF f=1MHz

ns VDD 5V, ID=10mA

ns VGS=5V

ns RL=500

ns RG=10

Data Sheet

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2/5

2011.10 - Rev.A

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