2SK3019EB 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SK3019EB Datasheet PDF : 6 Pages
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2SK3019EB
Electrical characteristics curves
0.15
4V
3V
Ta=25°C
3.5V
Pulsed
0.1
2.5V
0.05
2V
VGS=1.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
Ta=125°C
1m
75°C
0.5m
25°C
−25°C
0.2m
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
Data Sheet
2
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
50
20
Ta=125°C
75°C
25°C
10
−25°C
5
VGS=4V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
50
Ta=125°C
75°C
20
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
15
Ta=25°C
Pulsed
10
5
ID=10mA
ID=1mA
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
9
VGS=4V
8
Pulsed
7
ID=100mA
6
5
ID=10mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=−25°C
0.1
25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m
75°C
5m
25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
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2011.10 - Rev.A
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