K3156 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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K3156

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3156

Reverse Drain Current vs.

Source to Drain Voltage

20

Pulse Test

16

VGS = 10 V

12

8

5V

0, –5 V

4

0

0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage VSD (V)

Maximun Avalanche Energy vs.

Channel Temperature Derating

50

I AP = 20 A

40

V DD = 50 V

duty < 0.1 %

Rg > 50 Ω

30

20

10

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

6

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