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2SK3566(2010) 데이터 시트보기 (PDF) - Toshiba
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제조사
2SK3566
(Rev.:2010)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Toshiba
2SK3566 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3566
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
SINGLE PULSE
PDM
t
T
DuDtyut
=
y t
=
/Tt/T
RtRh
t(hch(c-ch)-c
=
)
3
=
.112.255°C°C/W/W
1
m
10
m
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
10
ID max (PULSED)
*
ID max (CONTINUOUS)
1
DC OPERATION
Tc
=
25°C
1 ms
*
100
μ
s
*
0.1
0.01
1
*
SINGLE NONREPETITIVE PULSE
Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
10
100
VDSS max
1000
10000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
250
200
150
100
50
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
63.4mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2010-05-06
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