2SK3642 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK3642 Datasheet PDF : 8 Pages
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2SK3642
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
VGS = 4.5 V
15
10
5
0
-50
10 V
ID = 32 A
Pulsed
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
C iss
C oss
100
C rss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
tf
td(on)
10
td(off)
tr
1
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
25
10
VDD = 24 V
20
15 V
8
15
VGS
6
10
4
5
2
VDS
ID = 64 A
0
0
0
5
10
15
20
25
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
10
VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D15970EJ4V0DS
5
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