2SK3605-01 데이터 시트보기 (PDF) - Fuji Electric
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2SK3605-01 Datasheet PDF : 4 Pages
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2SK3605-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.30
VGS=
5.5V 6.0V 6.5V
0.25
7.0V
7.5V
8V
0.20
10V
0.15
0.10
20V
0.05
0.00
0
10
20
30
40
ID [A]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Ciss
10-1
Coss
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
300
250
200
150
max.
100
typ.
50
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A, Tch=25°C
14
12
10
8
6
Vcc= 75V
4
2
0
0
10
20
30
40
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
10-2
1
Crss
10-3
10-1
100
101
102
VDS [V]
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3
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