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K3846 데이터 시트보기 (PDF) - Toshiba
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K3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
Toshiba
K3846 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
20
Common source
10 6
Tc
=
25°C
Pulse test
8
16
5.5
5
12
4.75
4.5
8
4
4.25
4
3.75
3.5
3.25
VGS
=
3 V
0
0
0.1
0.2
0.3
0.4
0.5
Drain
−
source voltage V
DS
(V)
2SK3846
100
80
6 5.5
5
10
8
60
I
D
– V
DS
Common source
Tc
=
25°C
Pulse test
4.75
4.5
4.25
40
4
3.75
20
VGS
=
3 V
3.5
3.25
0
0
2
4
6
8
10
Drain
−
source voltage V
DS
(V)
100
Common source
VDS
=
10 V
Pulse test
80
I
D
– V
GS
60
40
25
20
100
Tc
= −
55°C
0
0
2
4
6
8
10
Gate
−
source voltage V
GS
(V)
V
DS
– V
GS
1.0
Common source
Tc
=
25°C
Pulse test
0.8
0.6
0.4
ID
=
26 A
0.2
13
6.5
0
0
4
8
12
16
20
Gate
−
source voltage V
GS
(V)
100
Common source
VDS
=
10 V
Pulse test
⎪
Y
fs
⎪ −
I
D
Tc
= −
55°C
100
25
10
1
1
10
100
Drain current I
D
(A)
1000
R
DS (ON)
−
I
D
Common source
Tc
=
25°C
Pulse test
100
10
1
VGS
=
4.5 V
10
10
100
Drain current I
D
(A)
3
2006-09-27
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