2SK3814 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK3814 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
10
5
0
-75
VGS = 4.5 V
10 V
ID = 30 A
Pulsed
-25
25
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
tf
td(on)
tr
1
0.1
1000
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
0V
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3814
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
ID = 60 A
50
10
VDD = 48 V
40
30 V
8
12 V
30
6
VGS
20
4
10
0
0
VDS
20
40
60
80
QG - Gate Charge - nC
2
0
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0
1
10
100
IF - Diode Forward Current - A
Data Sheet D16740EJ1V0DS
5
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