2SK3814 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK3814 Datasheet PDF : 8 Pages
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2SK3814
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D16740EJ1V0DS
7
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