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2SK4013 데이터 시트보기 (PDF) - Toshiba
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2SK4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅣ )
Toshiba
2SK4013 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK4013
R
DS (ON)
−
Tc
5
Common source
V
GS
=10V
4
Pulse test
3
6
7
3
2
ID=1.5A
1
0
-80 -40
0
40
80
120 160
CASE TEMPERATURE Tc (°C)
I
DR
−
V
DS
10
Common source
Tc=25℃
Pulse test
1
3
10
VGS=0、-1V
1
0.1
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
10000
C – V
DS
1000
Ciss
Coss
100
Common source
V
GS
=0V
f=1MHz
Tc=25℃
Crss
10
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
−
Tc
5
4
3
2
Common source
1
V
DS
=10V
ID=1mA
Pulse test
0
-80
-40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
- Tc
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (
℃
)
450
VDS
300
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
Common source
15
ID
=
6 A
Tc
=
25°C
Pulse test
200
10
100
VDS
=
400 V
150
VGS
5
0
0
0
20
40
60
80
100
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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