2SK4033
0.2
C oソmーmスo接n s地ource
パPuルlsスe t測es定t
RDS(on)-Tc
0.15
0.1
VGS= 4 V
ID=5A
2.5
1.2
5
1.2
2.5
0.05
VGS= 1 0 V
0
-80
-40
0
40
80
120
160
Ambientケteーmpスe温rat度ur e TcT a ((℃°C))
10
1
0.1
0
IDR-VDS
5
10
3
1
VGGSS==0V0 V
Common source
TTソccー==2ス255接℃°C地
Pパuルlseスt測es定t
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Draドinレ-イsoンur・cソeーvoスlta間g電e 圧V DVSDS (V )(V)
10000
Ca静p電ac容ita量n-ceV–DSVDS
ソCーomスm接o地n source
VGSV=G0SV = 0 V
f=1Mf H=z1 MHz
Tc=T2c5℃= 25°C
1000
Ciss
100
10
0.1
Coss
Crss
1
10
100
Dドraレinイ-sンou・rソceーvスo間lta電ge圧 VVDDSS (V(V) )
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-80
Vth-Tc
ソCーomスm接o地n source
VVDDS=S10=V10 V
IIDD==1m1AmA
パPuルlsスe 測tes定t
-40
0
40
80
120
160
Caケseーtスem温p度er atTucre (T℃c ) (°C)
ダDイynナacミhmッaiクcra入icntp出eur力its/t特ioc性sutput
50
25
VDS
40
Common source
ソIITDDcー==5=スA52接A5°地C
TパPcuル=ls2スe5 ℃測tes定t
20
Case temperature Tc (°C)
30
20
10
0
0
4
15
12V
24V
10
VDD=48V
5
VGS
0
5
10
15
20
25
30
ゲToーtaトl 入ga力te電ch化ar量ge QQg g ((nnCC))
2006-11-20