DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

30CPQ060-N3 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명
상세내역
제조사
30CPQ060-N3
Vishay
Vishay Semiconductors Vishay
30CPQ060-N3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
VS-30CPQ0.0PbF, VS-30CPQ0.0-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.60
0.80
0.56
0.70
0.80
45
720
7.5
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthJC
RthCS
DC operation
See fig. 4
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Non-lubricated threads
Marking device
Case style TO-247AC (JEDEC)
VALUES UNITS
- 55 to 150 °C
2.20
1.10
°C/W
0.24
6
g
0.21
oz.
6 (5)
12 (10)
kgf cm
(lbf in)
30CPQ050
30CPQ060
Revision: 01-Sep-11
2
Document Number: 94183
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]