30ETH06STRL 데이터 시트보기 (PDF) - Vishay Semiconductors
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30ETH06STRL Datasheet PDF : 7 Pages
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30ETH06S/30ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED PtTM
180
160
DC
140
120 Square wave (D = 0.50)
Rated VR applied
100
See note (1)
80
0 5 10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
90
IF = 30 A
80
IF = 15 A
70
60
50
40
30
20 VR = 200 V
10 TJ = 125 °C
TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
90
80
70
RMS limit
60
50
40
30
20
10
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0 5 10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
1200
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
800
IF = 30 A
600
IF = 15 A
400
200
0
100
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93932
Revision: 08-Sep-08
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