31DQ04TR-M3 데이터 시트보기 (PDF) - Vishay Semiconductors
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31DQ04TR-M3 Datasheet PDF : 6 Pages
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VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com
Vishay Semiconductors
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0
0.3
0.6
0.9
1.2
93319_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 150 °C
10
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0
10
20
30
40
93319_02
VR - Reverse Voltage (V)
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
1000
150
DC
130
110
90
Square wave (D = 0.50)
80 % Rated VR applied
see note (1)
70
0
1
2
3
4
5
93319_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
2.5
D = 0.20
D = 0.25
2 D = 0.33
D = 0.50
D = 0.75
1.5
RMS Limit
DC
1
0.5
0
0
1
2
3
4
5
93319_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
TJ = 25 °C
100
100
10
0
40
80
120
160 200
93319_03
VR - Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
10
100
1000
10 000
93319_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 20-Sep-11
3
Document Number: 93319
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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