32CTQ030STRR 데이터 시트보기 (PDF) - Vishay Semiconductors
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32CTQ030STRR Datasheet PDF : 6 Pages
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32CTQ...S/32CTQ...-1
Vishay High Power Products Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
15 A
30 A
15 A
30 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.49
0.58
0.40
0.53
1.75
97
0.233
9.09
1300
8.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
TJ, TStg
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D2PAK
Case style TO-262
VALUES
- 55 to 150
UNITS
°C
3.25
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf ⋅ cm
(lbf ⋅ in)
32CTQ025S
32CTQ030S
32CTQ025-1
32CTQ030-1
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93961
Revision: 21-Aug-08
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