33976 데이터 시트보기 (PDF) - Freescale Semiconductor
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33976 Datasheet PDF : 41 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V, - 40°C ≤ TJ ≤ 150°C, GND = 0 V unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUTS (CONTINUED)
Full Step Active Output (Measured Across Coil Outputs)
VFS
SIN0, 1, ± (COS0, 1, ±) (see Figure 9, page 26)
Steps 1, 3 (0, 2)
Microstep, Full Step Output
VLS
(Measured from Coil Low Side to Ground)
SIN0, 1, ± (COS0, 1, ±), IOUT = 30 mA
Output Flyback Clamp (11)
VFB
Output Current Limit (Output = Vst6)
Overtemperature Shutdown (10)
Overtemperature Hysteresis (11)
ILIM
OTSD
OTHYST
CONTROL I/O
Input Logic High Voltage (12)
Input Logic Low Voltage (12)
Input Logic Voltage Hysteresis (10)
VIH
VIL
VIN(HYST)
Input Logic Pull Down Current (SI, SCLK)
IDWN
Input Logic Pull-Up Current (CS, RST)
IUP
SO High-State Output Voltage (IOH = 1.0 mA)
VSOH
SO Low-State Output Voltage (IOL = -1.6 mA)
VSOL
SO Tri-State Leakage Current (CS ≥ 3.5 V)
Input Capacitance (13)
SO Tri-State Capacitance (13)
ISOLK
CIN
CSO
ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT)
ADC Gain (10), (14)
GADC
V
4.9
5.3
6.0
V
0
0.1
0.3
–
VST6 + 0.5
VST6+ 1.0
V
40
100
170
mA
155
–
180
°C
8.0
–
16
°C
2.0
–
–
–
–
100
3.0
–
5.0
–
0.8 VDD
–
–
0.2
-5.0
0
–
4.0
–
–
–
V
0.8
V
–
mV
20
µA
20
µA
–
V
0.4
V
5.0
µA
12
pF
20
pF
100
188
270
Counts/
V/ms
Notes
10. This parameter is guaranteed by design, but it is not production tested.
11. Not 100 percent tested.
12. VDD = 5.0 V.
13. Capacitance not measured. This parameter is guaranteed by design, but it is not production tested.
14. Reference RTZ Accumulator (Typical) on page 23
33976
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
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