MC33883DW 데이터 시트보기 (PDF) - Freescale Semiconductor

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MC33883DW

H-Bridge Gate Driver IC

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0.0 V unless otherwise noted.

Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

TIMING CHARACTERISTICS

Propagation Delay High Side and Low Side

tPD

CLOAD = 5.0 nF, Between 50% Input to 50% Output (10) (see Figure 4)

ns

–

200

300

Turn-On Rise Time

CLOAD = 5.0 nF, 10% to 90% (10), (11) (see Figure 4)

tR

ns

–

80

180

Turn-Off Fall Time

CLOAD = 5.0 nF, 10% to 90% (10), (11) (see Figure 4)

tF

ns

–

80

180

10. CLOAD corresponds to a capacitor between GATE_HS and SRC_HS for the high side and between GATE_LS and ground for low side.

11. Rise time is given by time needed to change the gate from 1.0 V to 10 V (vice versa for fall time).

33883

8

Analog Integrated Circuit Device Data

Freescale Semiconductor

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