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3KP22AS 데이터 시트보기 (PDF) - Rectron Semiconductor

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3KP22AS
Rectron
Rectron Semiconductor Rectron
3KP22AS Datasheet PDF : 3 Pages
1 2 3
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
GPP TRANSIENT VOLTAGE SUPPRESSOR
3000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 3000 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
3KP22AS
D2PAK
.189 (4.80)
.173 (4.40)
.053 (1.35)
.049 (1.25)
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
1K 2
.202 (5.13)
.198 (5.03)
.412 (10.46)
.388 (9.86)
.055 (1.40)
.047 (1.20)
.036 (0.91)
.028 (0.71)
PIN 1
PIN 2
.020 (0.50)
K - HEATSINK
.012 (0.30)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1, FIG.1)
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)
Steady State Power Dissipation at TL = 75oC lead lengths
0.375” (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
Operating and Storage Temperature Range
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
TJ, TSTG
VALUE
Minimum 3000
SEE TABLE 1
8.0
250
-55 to + 150
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25oC per Fig.2.
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
UNITS
Watts
Amps
Watts
Amps
0C
2004-6
REV: O

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