3N259-E4 데이터 시트보기 (PDF) - Vishay Semiconductors
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3N259-E4 Datasheet PDF : 5 Pages
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www.vishay.com
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
2KBPxxM, 3N25x
Vishay General Semiconductor
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Revision: 04-Jul-13
3
Document Number: 88532
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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