3RW3 데이터 시트보기 (PDF) - Electronic devices inc.

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3RW3

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES

Electronic devices inc. 

3W 3RW

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY

SILICON RECTIFIER DIODES

Up to 250 ns max. recovery

Small size

Exceptionally low leakage

Avalanche characteristics

EDI

Typ e

PRV

Voits

REVERSE RECOVERY TIME

(Fig.4)

3W2

3W2.5

3W3

3RW2

3RW2.5

3RW3

2,000

2,500

3,000

2,000

2,500

3,000

Not applicable

Not applicable

Not applicable

250 ns max.

250 ns max.

250 ns max.

ELECTRICAL CHARACTERISTICS(at TA=25°C Unless Otherwise Specified)

ELECTRICAL CHARACTERISTICS

3W

SERIES 3RW SERIIES

Average Rectified Forward Current @ 50 oC, IO (Fig.1)

2 Amp

1.5 Amp

Max. Peak Surge Cureent,IFSM (8.3 ms) (Fig.2)

Max.Forward Voltage Drop @ 2.0 A, VF

Max. DC Reverse Current @ PRV and 25 oC, IR

Max. DC Reverse Current @ PRV and100oC, IR

Ambient Operating Temperature Range,TA

Storage Temperature Range,TSTG

300 Amp

200 Amp

3VDC max.

4VDC max.

5A

10 A

150 A

200 A

-55 oC to +150 oC -55 oC to +125 oC

-55 oC to +150 oC

NOTES:It is recommemded that a proper heat sink be used on the terminals of this device

between the body and soldering point to prevent damage from excess heat.

Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 OC

EDI reserves the right to change these specifications at any time without notice.

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