AT28LV010-20 데이터 시트보기 (PDF) - Atmel Corporation

부품명

상세내역

제조사

AT28LV010-20

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs

Atmel Corporation 

Features

• Single 3.3V ± 10% Supply

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-Byte Page Write Operation

• Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 105 Cycles

– Data Retention: 10 Years

• JEDEC Approved Byte-Wide Pinout

• Industrial and Automotive Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

1. Description

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-

mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 54 mW. When the device

is deselected, the CMOS standby current is less than 20 µA.

The AT28LV010 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 128-byte page register to allow

writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to

128 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s 28LV010 has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved

data retention characteristics. Software data protection is implemented to guard

against inadvertent writes. The device also includes an extra 128 bytes of EEPROM

for device identification or tracking.

1-Megabit

(128K x 8)

Low Voltage

Paged Parallel

EEPROMs

AT28LV010

0395D–PEEPR–10/06

Share Link: