5N60-TA3-T 데이터 시트보기 (PDF) - Unisonic Technologies
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5N60-TA3-T Datasheet PDF : 6 Pages
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5N60
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
Continuous Drain Current
IAR
4.5
A
TC = 25℃
TC = 100℃
ID
4.5
2.6
A
A
Pulsed Drain Current (Note 1)
IDM
18
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
210
mJ
Avalanche Energy, Repetitive Limited by TJ(MAX)
EAR
10
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
TC = 25℃
Derate above 25℃
PD
100
W
0.8
W/℃
Junction Temperature
TJ
+150
℃
Operating and Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
PARAMETER
SYMBOL
θJA
θJC
θCS
RATINGS
62.5
1.25
0.5
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)
UNIT
°C/W
°C/W
°C/W
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
Gate-Body Leakage Current
Forward
Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On
Delay Time
Rise Time
Turn-Off
Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS VGS =0V, ID = 250µA
600
IDSS
VDS =600V, VGS = 0V
VDS =480V, TC = 125℃
△BVDSS/△
TJ
ID
=250µA,
Referenced
to
25℃
IGSS
VGS =30V, VDS = 0V
VGS =-30V, VDS = 0V
V
1 µA
10 µA
0.6
V/℃
100 nA
-100 nA
VGS(TH) VDS =VGS, ID = 250µA
2.0
4.0 V
RDS(ON) VGS =10V, ID = 2.25A
2.0 2.5 Ω
gFS VDS =40V, ID = 2.25A (Note 4)
4.7
S
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
515 670 pF
55 72 pF
6.5 8.5 pF
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 300V, ID =4.5 A,
RG = 25Ω (Note 4, 5)
VDS = 480 V, ID = 4.5A,
VGS = 10 V (Note 4, 5)
10 30 ns
42 90 ns
38 85 ns
46 100 ns
15 19 nC
2.5
nC
6.6
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-065,B
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