5N60G-A-TA3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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5N60G-A-TA3-R

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

Unisonic Technologies 

5N60

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage 5N60-A

5N60-B

BVDSS

VGS =0V, ID = 250μA

VGS =0V, ID = 250μA

Drain-Source Leakage Current

IDSS

VDS =600V, VGS = 0V

Gate-Source Leakage Current Forward

Reverse

IGSS

VGS =30V, VDS = 0V

VGS =-30V, VDS = 0V

Breakdown Voltage Temperature

Coefficient

△BVDSS/△TJ ID =250μA, Referenced to 25℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS =VGS, ID = 250μA

Static Drain-Source On-State Resistance

RDS(ON) VGS =10V, ID = 2.25A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25V, VGS = 0V,

f = 1.0MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD = 300V, ID =4.5 A,

RG = 25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS = 480 V, ID = 4.5A,

VGS = 10 V (Note 1, 2)

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 4.5 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR

VGS = 0 V, IS = 4.5 A,

QRR

dIF / dt = 100 A/μs (Note 1)

Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

600

V

650

1 μA

100 nA

-100

0.6

V/°C

2.0

4.0 V

2.0 2.5 Ω

515 670 pF

55 72 pF

6.5 8.5 pF

10 30 ns

42 90 ns

38 85 ns

46 100 ns

15 19 nC

2.5

nC

6.6

nC

1.4 V

4.5 A

18 A

300

ns

2.2

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-065,F

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