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6R1MBI75P-160 데이터 시트보기 (PDF) - Fuji Electric

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6R1MBI75P-160
Fuji
Fuji Electric Fuji
6R1MBI75P-160 Datasheet PDF : 4 Pages
1 2 3 4
6R1MBi75P-160
Diode Module
Diode Module with Brake
Diode:1600V / 75A, IGBT:1400A/50A
Features
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol Condition
Rating
Unit
Repetitive peak reverse voltage
VRRM
1600
V
Non-repetitive peak reverse voltage
VRSM
1760
V
Average output current
IO
50Hz/60Hz sine wave
75
A
Tc=115°C
One cycle surge current
I2t
Operation junction temperature
定機種2007. Collector-Emitter voltage
Gate-Emitter voltage
arch Collector current
守廃obsoletdeeosnigmn. Collector power disspation
Repetitive peak reverse voltage
2007年3月scheduled be new Operation junction temperature
for Storage junction temperature
Isolation voltage
end Mounting screw torque
IFSM
I2t
Tj
VCES
VGES
IC
ICP
PC
VRRM
Tj
Tstg
Viso
From rated load
From rated load
DC
1ms
1 device
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
AC : 1 minute
M5 screw
600
1440
-40 to +125
1400
±20
50
35
100
70
240
1400
+150
-40 to +125
3000
2.0 to 2.5
product is recomm Electrical characteristics (Tj=25°C unless otherwise specified)
ot Item
Symbol
Condition
his N Fofward voltage
T Reverse current
VFM
IRRM
Tj=25°C, IFM=75A
Tj=150°C, VR=VRRM
Min.
Typ.
A
A2s
°C
V
V
A
A
W
V
°C
°C
V
N·m
Max.
1.35
15
Unit
V
mA
Zero gate voltage Collector current
ICES
VGE=0V. VCE=1400V
1.0
mA
Gate-Emitter leakage current
IGES
VCE=0V. VGE=±20V
200
nA
Collector-Emitter saturation voltage
VCE(sat)
VGE=15V. IC=35A
2.4
2.8
V
Turn-on time
ton
Vcc=800V
0.35
1.2
µs
Turn-off time
tr
Ic=35A
toff
VGE=±15V
0.25
0.6
0.45
1.0
Reverse current
tf
IRRM
RG=33ohm
0.08
0.3
1.0
mA
Thermal characteristics
Item
Thermal resistance
Thermal Resistance(Case to fine)
Symbol
Rth(j-c)
Rth(c-f)
Condition
Converter Per total loss
Per each device
Brake IGBT (1 device)
with thermal compound
Min.
Typ.
Max.
0.16
0.96
0.70
0.08
Unit
°C/W
°C/W

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