6R1MBI75P-160 데이터 시트보기 (PDF) - Fuji Electric
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6R1MBI75P-160 Datasheet PDF : 4 Pages
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Diode Module
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
6R1MBi75P-160
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
20
20
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
80
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
Tj= 25°C
Tj= 125°C
60
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守廃ob止soletdeeosnigmn. 20
2007年3月sche保duled befor new 0
0
1
2
3
4
5
end Collector - Emitter voltage : VCE [ V ]
This producNtoits recomm 10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
8
6
4
2
0
5
1000
Ic= 70A
Ic= 35A
Ic= 17.5A
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=35A, Tj= 25°C
25
800
20
Cies
600
15
1000
Coes
400
10
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
200
0
0
5
0
100
200
300
400
Gate charge : Qg [ nC ]
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