DG626BH25 데이터 시트보기 (PDF) - Dynex Semiconductor
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DG626BH25 Datasheet PDF : 19 Pages
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DG646BH25
2500
2000
Conditions:
Tj = 25˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
1500
1000
VDRM
0.75x VDRM
0.5x VDRM
500
0
0
500
1000
1500
2000
2500
3000
On-state current IT - (A)
FIG 15 TURN OFF ENERGY ON STATE CURRENT
Fig.15 Turn-off energy vs on-state current
2500
2000
1500
1000
VDRM
0.75x VDRM
Conditions:
Tj = 25˚C,
CS = 2.0µF,
IT = 2000A
0.5x VDRM
10/19
500
20
30
40
50
60
70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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