MCD224-20IO1(2017) 데이터 시트보기 (PDF) - IXYS CORPORATION
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MCD224-20IO1 Datasheet PDF : 6 Pages
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MCD224-20io1
Thyristor
8000
6000
ITSM
IFSM 4000
[A]
2000
50 Hz
80% V RRM
T VJ = 45 C
T VJ = 130 C
106
V = 0V
R
I2t
105
[A2s]
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current
IT(F)SM: crest value, t: duration
500
400
PT 300
[W] 200
100
DC
180 sin
120
60
30
104
1
2
3 4 5 6 7 8 10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
R K/W
thK A
0.1
0.2
0.3
0.4
0.6
0.8
1
0
0
100
200
300
0
25
50
75 100
ITAVM, IFAVM [A]
TA [°C]
Fig. 4 Power dissipation versus onstate current and•
ambient temperature (per thyristor/diode)
2000
1500
PT
[W] 1000
500
Circuit
B6
3xMCC224
125 150
R K/W
thK A
0.03
0.05
0.08
0.1
0.15
0.2
0.3
400
350
300
ITAVM 250
200
[A]
150
DC
180 sin
120
60
30
100
50
0
0 2 5 5 0 7 5 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
10
1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
6
5
4
IGD, TVJ = 130°C
0.1
10-3
10-2
10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100
101
102
Fig. 5 Gate trigger characteristics
100
TVJ = 25°C
10
tgd
[µs]
1
typ. limit
0
0
200
400
600
0
25
50
75
100 125 150
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.1
01.001
100.10
10100
1001000
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
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