GS881E18AT-250 데이터 시트보기 (PDF) - Giga Semiconductor

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GS881E18AT-250

512K x 18, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

Preliminary

GS881E18/36AT-250/225/200/166/150/133

Absolute Maximum Ratings

(All voltages reference to VSS)

Symbol

Description

Value

Unit

VDD

VDDQ

VCK

VI/O

VIN

IIN

IOUT

PD

TSTG

TBIAS

Voltage on VDD Pins

Voltage in VDDQ Pins

Voltage on Clock Input Pin

Voltage on I/O Pins

Voltage on Other Input Pins

Input Current on Any Pin

Output Current on Any I/O Pin

Package Power Dissipation

Storage Temperature

Temperature Under Bias

–0.5 to 4.6

V

–0.5 to 4.6

V

–0.5 to 6

V

–0.5 to VDDQ +0.5 (≤ 4.6 V max.)

V

–0.5 to VDD +0.5 (≤ 4.6 V max.)

V

+/–20

mA

+/–20

mA

1.5

W

–55 to 125

oC

–55 to 125

oC

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of

this component.

Rev: 1.01 3/2002

11/34

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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