74HC2G02(2018) 데이터 시트보기 (PDF) - NXP Semiconductors.
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74HC2G02 Datasheet PDF : 12 Pages
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Nexperia
74HC2G02; 74HCT2G02
Dual 2-input NOR gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit, see Fig. 6.
Symbol Parameter
Conditions
-40 °C to +85 °C
Min Typ [1] Max
74HC2G02
tpd
propagation delay nA and nB to nY; see Fig. 5
VCC = 2.0 V
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
tt
transition time
see Fig. 5
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation VI = GND to VCC
capacitance
[2]
-
-
-
-
[3]
-
-
-
[4] -
26
95
9
19
9
-
8
16
19
95
7
19
5
16
10
-
74HCT2G02
tpd
propagation delay nA and nB to nY; see Fig. 5
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Fig. 5
CPD
power dissipation VI = GND to VCC - 1.5 V
capacitance
[2]
-
-
[3] -
[4] -
12
24
12
-
6
19
10
-
-40 °C to +125 °C Unit
Min
Max
-
110 ns
-
22 ns
-
- ns
-
20 ns
-
125 ns
-
25 ns
-
20 ns
-
- pF
-
29 ns
-
- ns
-
22 ns
-
- pF
[1] All typical values are measured at Tamb = 25 °C.
[2] tpd is the same as tPLH and tPHL.
[3] tt is the same as tTLH and tTHL.
[4] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of outputs.
74HC_HCT2G02
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 26 July 2018
© Nexperia B.V. 2018. All rights reserved
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