74HC2G86(2014) 데이터 시트보기 (PDF) - NXP Semiconductors.
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74HC2G86 Datasheet PDF : 15 Pages
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NXP Semiconductors
74HC2G86; 74HCT2G86
Dual 2-input EXCLUSIVE-OR gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 7.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
74HC2G86
tpd
propagation nA, nB to nY; see Figure 6 [1]
delay
VCC = 2.0 V
- 34 120 -
150
-
180 ns
VCC = 4.5 V
- 11 20
-
25
-
36 ns
VCC = 6.0 V
- 9.0 17
-
21
-
30 ns
tt
transition nY; see Figure 6
time
VCC = 2.0 V
[2]
- 18 75
-
95
-
110 ns
VCC = 4.5 V
-
6 15
-
19
-
22 ns
VCC = 6.0 V
5 13
-
16
-
20 ns
CPD
power
per buffer;
[3] -
10
-
-
-
-
-
pF
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
74HCT2G86
tpd
propagation nA, nB to nY; see Figure 6 [1]
delay
VCC = 4.5 V
- 11 19
-
23
-
48 ns
tt
transition nY; see Figure 6
time
VCC = 4.5 V
[2]
-
6 15
-
19
-
22 ns
CPD
power
per buffer;
[3] -
9
-
-
-
-
-
pF
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
[1] tpd is the same as tPLH and tPHL.
[2] tt is the same as tTLH and tTHL.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
74HC_HCT2G86
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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