74HC3G07 데이터 시트보기 (PDF) - NXP Semiconductors.
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74HC3G07 Datasheet PDF : 13 Pages
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NXP Semiconductors
74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 °C; for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
74HCT3G07
tPZL
OFF-state to LOW nA to nY; see Figure 6
propagation delay
VCC = 4.5 V
tPLZ
LOW to OFF-state nA to nY; see Figure 6
propagation delay
VCC = 4.5 V
tTHL
HIGH to LOW output VCC = 4.5 V; see Figure 6
transition time
-
11
27
-
-
10
26
-
-
6
19
-
32 ns
31 ns
22 ns
CPD
power dissipation
VI = GND to VCC − 1.5 V [1]
-
4
capacitance
-
-
pF
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of outputs.
12. Waveforms
VI
nA input
GND
VCC
nY output
VOL
VM
tPLZ
VX
Measurement points are given in Table 9.
VOL is the typical output voltage level that occurs with the output load.
Fig 6. The input (nA) to output (nY) propagation delays
tPZL
VM
tTHL
001aak034
Table 9. Measurement points
Type
Input
74HC3G07
74HCT3G07
VM
0.5 × VCC
1.3 V
Output
VM
0.5 × VCC
1.3 V
VX
0.1 × VCC
0.1 × VCC
74HC_HCT3G07_2
Product data sheet
Rev. 02 — 12 May 2009
© NXP B.V. 2009. All rights reserved.
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