74LVC1G80 데이터 시트보기 (PDF) - NXP Semiconductors.
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74LVC1G80 Datasheet PDF : 16 Pages
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NXP Semiconductors
74LVC1G80
Single D-type flip-flop; positive-edge trigger
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 9.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min
Typ[1]
Max
tpd
propagation delay CP to Q; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
1.0
3.4
9.9
VCC = 2.3 V to 2.7 V
0.5
2.3
7.0
VCC = 2.7 V
0.5
2.5
6.0
VCC = 3.0 V to 3.6 V
0.9
2.4
5.0
VCC = 4.5 V to 5.5 V
0.5
1.8
4.5
tsu
set-up time
HIGH or LOW; D to CP;
[3]
see Figure 8
th
hold time
tW
pulse width
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
D to CP; see Figure 8
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
CP HIGH or LOW;
see Figure 8
2.3
0.8
-
1.5
0.6
-
1.5
0.5
-
1.3
0.4
-
1.1
0.5
-
0
−0.6
-
0
−0.4
-
+0.5
−0.2
-
0.9
0.2
-
+0.5
−0.1
-
VCC = 1.65 V to 1.95 V
3.0
1.1
-
VCC = 2.3 V to 2.7 V
2.5
0.7
-
VCC = 2.7 V
2.5
0.6
-
VCC = 3.0 V to 3.6 V
2.5
0.6
-
VCC = 4.5 V to 5.5 V
2.0
0.5
-
fmax
maximum
frequency
CP; see Figure 8
VCC = 1.65 V to 1.95 V
160
300
-
VCC = 2.3 V to 2.7 V
160
350
-
VCC = 2.7 V
160
350
-
VCC = 3.0 V to 3.6 V
160
350
-
VCC = 4.5 V to 5.5 V
200
400
-
CPD
power dissipation VI = GND to VCC;
capacitance
VCC = 3.3 V
[4]
-
17
-
−40 °C to +125 °C Unit
Min
Max
1.0
13.0 ns
0.5
9.0 ns
0.5
8.0 ns
0.9
6.5 ns
0.5
6.0 ns
2.3
- ns
1.5
- ns
1.5
- ns
1.3
- ns
1.1
- ns
0
- ns
0
- ns
0.5
- ns
0.9
- ns
0.5
- ns
3.0
- ns
2.5
- ns
2.5
- ns
2.5
- ns
2.0
- ns
160
- MHz
160
- MHz
160
- MHz
160
- MHz
200
- MHz
-
- pF
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] tsu is the same as tsu(H) and tsu(L).
[4] CPD is used to determine the dynamic power dissipation (PD in µW).
74LVC1G80_8
Product data sheet
Rev. 08 — 29 August 2007
© NXP B.V. 2007. All rights reserved.
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