74LVC3G07 데이터 시트보기 (PDF) - NXP Semiconductors.
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74LVC3G07 Datasheet PDF : 21 Pages
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NXP Semiconductors
74LVC3G07
Triple buffer with open-drain output
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 9.
Symbol Parameter
Conditions
40 C to +85 C
Min Typ[1] Max
tpd
propagation delay nA to nY; see Figure 8
[2]
VCC = 1.65 V to 1.95 V
1.0
2.9
6.7
VCC = 2.3 V to 2.7 V
0.5
1.7
4.3
VCC = 2.7 V
1.0
2.3
4.2
VCC = 3.0 V to 3.6 V
0.5
2.1
3.7
VCC = 4.5 V to 5.5 V
0.5
1.5
2.9
CPD
power dissipation VI = GND to VCC; VCC = 3.3 V [3]
-
6.5
-
capacitance
40 C to +125 C Unit
Min
Max
1.0
8.4
ns
0.5
5.5
ns
1.0
5.3
ns
0.5
4.7
ns
0.5
3.7
ns
-
-
pF
[1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLZ and tPZL.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
12. Waveforms
VI
nA input
GND
VCC
nY output
VOL
VM
t PLZ
VX
Fig 8.
Measurement points are given in Table 9.
VOL is the typical output voltage level that occurs with the output load.
The input (nA) to output (nY) propagation delays
VM
t PZL
VM
mna528
74LVC3G07
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 9 April 2013
© NXP B.V. 2013. All rights reserved.
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