7MBR25SA120 데이터 시트보기 (PDF) - Fuji Electric
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7MBR25SA120 Datasheet PDF : 7 Pages
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IGBT Modules
7MBR25SA120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, Ic=25A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG=51Ω
IF=25A
chip
terminal
IF=25A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V chip
terminal
VCC=600V
IC=15A
VGE=±15V
RG=82Ω
VR=1200V
IF=25A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5
7.2
8.5
2.1
2.2
2.6
3000
0.35
1.2
0.25
0.6
0.1
0.45
1.0
0.08
0.3
2.3
2.4
3.2
0.35
1.0
0.2
2.1
2.2
2.6
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
1.0
1.1
1.2
1.5
1.0
5000
465
495
520
3305
3375
3450
Unit
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
Ω
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.69
1.30
1.14
0.90
0.05
Unit
°C/W
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
1(R)
2(S)
3(T)
7(B)
20(G u)
1 9 (E u )
[In v er ter ]
18(G v)
16(G w)
1 7 (E v )
4(U)
15(Ew)
5(V)
[T h e rm is to r]
8
9
6(W )
23(N)
14(G b)
24(N1)
13(G x)
12(G y)
11(G z)
10(En)
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