7N60ZG-TA3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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7N60ZG-TA3-R

7.4A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

7N60Z

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

1 μA

Gate- Source Leakage Current

Forward

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

10 μA

-10 μA

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

VGS(TH)

RDS(ON)

VDS = VGS, ID = 250μA

VGS = 10V, ID = 3.7A

2.0

4.0 V

0.83 1 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS=25V, VGS=0V,

f=1.0 MHz

1400 pF

180 pF

16 21 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

tD(ON)

tR

tD(OFF)

tF

QG

QGS

QGD

VDD =300V, ID =7.4A,

RG =25Ω (Note 1, 2)

VDS=480V, ID=7.4A,

VGS=10 V (Note 1, 2)

70 ns

170 ns

140 ns

130 ns

29 38 nC

7

nC

14.5

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 7.4 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

1.4 V

7.4 A

29.6 A

Reverse Recovery Time

trr

VGS = 0V, IS = 7.4 A,

Reverse Recovery Charge

QRR

dIF / dt = 100A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

320

ns

2.4

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-349.E

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