PJE8550CT 데이터 시트보기 (PDF) - Promax Johnton

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PJE8550CT

PNP Epitaxial Silicon Transistors

Promax Johnton 

PJE8550

PNP Epitaxial Silicon Transistors

OUTPUT AMPLIFIER OF PORTABLE

RADIO IN CLAS S B PUS H-PULL OPERATION

• Complement to PJE8050

• Collector Current Ic=-0.5A

• Collector Dissipation Pc=0.625W(Tc=25°C)

T O-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Characteristic

Symbol Rating Unit

Collector-base Voltage

VCBO

-20

V

Collector-Emitter Voltage VCEO

-20

V

Emitter-base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-0.5

A

Collector Dissipation

PC

0.625

W

Junction Temperature

TJ

150

°C

Storage Temperature

T stg

-55~150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C)

Pin: 1.Emitter

2. Colletor

3. Base

ORDERING INFORMATION

Device

Operating Temperature

PJE8550CT

-20℃～+85℃

Package

T O-92

Characteristic

Collector-Base Breakdown Voltage

Collector- Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain-Bandwidth product

hFE(1) CLASSIFICATION

Symbol

Test Condition

Min Typ Max Unit

BVCBO Ic=-100µA,IE=0

-20

V

BVCEO Ic=-1mA,IB=0

-20

V

BVEBO IE=-100µA,IC=0

-5

V

ICBO

VCB=-20V,IE=0

-100

nA

IEBO

VEB=-3V,Ic=0

100

-100

nA

HEF1

VCE=-1V,IC=-50 mA

40

400

HEF2

VCE=-1V,IC=-500mA

VCE(SAT) Ic=-500 mA,IB=-50 mA

-0.6

V

VBE(SAT) Ic=-500 mA,IB=-50 mA

-1.2

V

fT

VCE=-10V,Ic=-50mA

220

MHz

Classification

hFE(1)

B

85-160

C

120-210

D

180-300

E

380-600

1-3

2002/01.rev.A

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