IS93C46-3GRI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS93C46-3GRI

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

Integrated Silicon Solution 

IS93C46-3

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VGND

TBIAS

TBIAS

TSTG

Parameter

Voltage with Respect to GND

Temperature Under Bias (IS93C46-3)

Temperature Under Bias (IS93C46-3I)

Storage Temperature

Value

Unit

–0.3 tp +6.5

V

0 to +70

°C

–40 to +85

°C

–65 to +125

°C

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

2.7V to 6.0V

2.7V to 6.0V

ISSI ®

CAPACITANCE

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

5

pF

5

pF

FIGURE 1. AC TEST CONDITIONS

+2.08V

DOUT

Vcc = 5.0V

800Ω

100 pF

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

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